Memory devices and formation methods

ABSTRACT

A method includes forming an electrical insulator material over an integrated circuit having a metal-containing conductive interconnect and activating a dopant in a semiconductor material of a substrate to provide a doped region. The doped region provides a junction of opposite conductivity types. After activating the dopant, the substrate is bonded to the insulator material and at least some of the substrate is removed where bonded to the insulator material. After the removing, a memory cell is formed having a word line, an access diode, a state-changeable memory element containing chalcogenide phase change material, and a bit line all electrically connected in series, the access diode containing the junction as a p-n junction. A memory device includes an adhesion material over the insulator material and bonding the word line to the insulator material.

TECHNICAL FIELD

The invention pertains to memory devices and to methods of formingdiode-accessed, cross-point memory cells having a state-changeablememory element containing chalcogenide phase change material.

BACKGROUND

Known diode-accessed, cross-point memory cells may use a rectifyingdiode as an access device to a state-changeable memory element. Thememory element may contain chalcogenide phase change material. Applyinga current to the memory element may change a phase of the material sothat the memory element exhibits a different resistance. The phase mayalso be changed back. Hence, the two resistive states provide the “on”and “off” status for data storage.

FIG. 1 shows a conceptual, perspective view of a diode-accessed,cross-point memory array and illustrates its general spatialconfiguration. The simplified view of FIG. 1 merely shows a memory array100 that includes words lines 102 having a direction orthogonal to adirection of bit lines 104 and overlapping at cross-points. Atcross-points, an access diode containing a n-type material 106 and ap-type material 108 is combined with a memory element 110 in anelectrically-connected series extending between word line 102 and bitline 104 at the cross-point. Actual structures implementing the conceptshown in FIG. 1 may be formed by a variety of known methods.

To achieve a 4F² footprint, where “F” is feature size of the accessdiode, some known methods form n-type material 106 and p-type material108 in a monocrystalline silicon substrate. With the rectifying diodepositioned in monocrystalline silicon, a high current density may beprovided to effect a phase change in the state-changeable memory element110 when it contains chalcogenide phase change material. Othersilicon-based diodes may include those formed in polysilicon.

Unfortunately, forming silicon-based diodes uses processing temperaturesin excess of 400° C. For activation annealing, temperature may be from800° C. to 1000° C. for a time of from 2 hours to 20 seconds. As aresult, structures of the memory array sensitive to temperatures inexcess of 400° C. are formed in advance of processing the silicon-baseddiodes. Although silicon-based diodes may provide a high currentdensity, their presence also limits the materials and processing ordersuitable for forming the memory array. Methods and/or materials thatovercome the limitations of using silicon-based diodes may be useful.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a conceptual, perspective view of a known memory array.

FIG. 2 shows a partial, cross-sectional view of a memory array.

FIG. 3-5 show the memory array of FIG. 2 at a successive process steps.

FIG. 6 shows a conceptual, perspective view of the FIG. 5 memory array.

FIGS. 7-8 show partial, cross-sectional views of a substrate containinga semiconductor material at successive process steps.

FIGS. 9-10 show partial, cross-sectional views of another substratecontaining a semiconductor material at successive process steps.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

FIG. 2 shows a partial, cross-sectional view of a memory level 200 thatrepresents one example of an integrated circuit over which adiode-accessed, cross-point array of memory cells may be formedaccording to the embodiments described herein. A few options for anintegrated circuit include a memory array, a peripheral circuit, acentral processing unit (CPU), and application-specific integratedcircuit (ASIC), a field-programmable gate array (FPGA), combinationsthereof, etc. Notably, memory level 200 of FIG. 2 has both a peripheralregion 238 including a peripheral circuit and an array region 240including a memory array. Peripheral region 238 may include memory celladdressing circuits and memory cell read circuits and interoperate withmemory cells of array region 240. As will be appreciated from thediscussion below, including a peripheral circuit as the integratedcircuit and forming most or all of memory devices elevationally abovethe integrated circuit may enable reducing die size for the overalldevice.

The term “peripheral” designating peripheral region 238 refers to thefunction of circuits in such region and does not restrict the locationof peripheral region 238 with respect to array region 240. Often, anarray region may be positioned at the center of a memory device withmemory cell read circuits and memory cell addressing circuits located inthe periphery surrounding the array region. Hence, such circuits may betermed “peripheral” but, partly as a result of improvements in moderndesign and processing, may be located anywhere known to be suitablewithin the memory devices described herein. Also, although FIG. 2displays some detail regarding structural features of circuits inperipheral region 238, the embodiments are not restricted to suchstructural features. Any known memory cell read circuits, memory celladdressing circuits, and other circuits may be used in peripheral region238 to provide an operable memory device containing memory level 200.

Without elaborating extensively on the specific structural features ofcircuits in peripheral region 238, it is easily observable by those ofordinary skill that a substrate 224 has openings formed thereincontaining insulator material 236 and forming an active area 232.Substrate 224 may include a monocrystalline semiconductor, including butnot limited to monocrystalline silicon. In the context of this document,the term “semiconductor substrate” or “semiconductive substrate” isdefined to mean any construction comprising semiconductive material,including, but not limited to, bulk semiconductive materials such as asemiconductive wafer (either alone or in assemblies comprising othermaterials thereon), and semiconductive material layers (either alone orin assemblies comprising other materials). The term “substrate” refersto any supporting structure, including, but not limited to, thesemiconductive substrates described above.

Insulator material 236 may include silicon oxide, silicon nitride,silicon oxynitride, combinations thereof, etc. Plasma enhanced chemicalvapor deposition may be used to form insulator material 236 using, forexample, tetraethylorthosilicate (TEOS)-based methods, which may includeozone. Conductive contacts 242 may be provided between substrate 224 andconductive plugs 234. Contacts 242 may contain cobalt silicide (CoSi₂),and/or other materials, and plugs 234 may contain tungsten, and/or othermaterials. Conductive vias 228, which may contain tungsten, and/or othermaterials, may extend through insulator material 236 electricallyconnecting plugs 234 with conductive metallization 226. Metallization226 may contain aluminum, copper, and/or other materials. While vias 228and plugs 234 provide vertical conductive interconnections, conductivelines 230 provide horizontal conductive interconnections, shown incross-sectional view extending into and out of the sectional plane ofFIG. 2.

Turning to array region 240 of FIG. 2, individual memory cells include aword line 202, n-type material 206, p-type material 208, memory element210, and a bit line 204 all electrically connected in series. In theembodiment of FIG. 2, word line 202, n-type material 206, and p-typematerial 208 are all formed in substrate 224. Among other methods, suchmay be accomplished by placing dopants in a common semiconductormaterial to provide differing conductivity types and/or dopantconcentrations.

As one example, substrate 224 may exhibit p-type conductivity while theportion of substrate 224 encompassing word line 202 and n-type material206 may exhibit n-type conductivity and be heavily doped to provide n+material. P-type material 208 may also be heavily doped to provide p+material. As another example, though not shown in FIG. 2, the portion ofsubstrate 224 encompassing word line 202 may be heavily doped to providen+ material and the portion of substrate 224 encompassing n-typematerial 206 may be lightly doped to provide n− material. Other knowndoping arrangements, materials, and/or layers may be used to provide asuitable access diode containing a p-n junction electrically connectedin series with a word line and a state-changeable memory element.

In FIG. 2, a contact 212 is provided between p-type material 208 and aplug 214. Contact 212 may contain a material in common with contacts 242and plug 214 may contain a material in common with plugs 234. Being at acommon elevational level and serving similar purposes, contact 212 andplug 214 may be formed at the same time as respective contacts 242 andplugs 234. A via including a conductive liner 216 and an insulatormaterial fill 218 may be provided electrically connecting plug 214 tomemory element 210. Conductive liner 216 in the via may include titaniumnitride, and/or other materials, and fill 218 may include a material incommon with insulator material 236. Alternatively, the via may be formedwholly of conductive material, such as TiN or TiAlN, without anyinsulator material fill.

A cap 220 over memory element 210 and a via 222 electrically connectmemory element 210 to bit line 204. Cap 220 may include titaniumnitride, and/or other materials, and via 222 may include tungsten,and/or other materials. Memory element 210 may include a chalcogenidephase change material and spans across multiple memory cells along withcap 220. In FIG. 2, memory element 210 and cap 220 are represented as acontinuous line parallel to bit line 204. Alternatively, memory element210 and cap 220 may be isolated to individual memory cells. One exampleof a suitable phase change material includes germanium antimonytellurium (GST) which may exhibit a composition consisting ofGe_(x)Sb_(y)Te_(z), where x, y, and z may be within ranges known toprovide the desired state-changeable properties.

As may be appreciated from the discussion herein and FIGS. 1-2, thememory array in array region 240 implements the concept ofdiode-accessed, cross-point memory shown in FIG. 1. The memory structureshown fits within a broader category of memory known as resistive randomaccess memory (RRAM), which includes another category of memory known asphase change random access memory (PCRAM) also encompassing the shownmemory structure. Bit line 204 extends in a direction orthogonal to wordline 202 in a manner similar to that shown for bit line 104 and wordline 102 in FIG. 1, with word line 202 shown in cross-sectional viewextending into and out of the sectional plane of FIG. 2. As such, bitline 204 and word line 202 overlap at a cross-point. The access diode,containing n-type material 206 and p-type material 208, and memoryelement 210 extend between word line 202 and bit line 204 at thecross-point. Although word line 202 and bit line 204 are shown extendingin directions orthogonal to one another, it will be appreciated thatembodiments herein encompass bit lines and word lines overlapping atcross-points though not extending in orthogonal directions.

As indicated, forming silicon-based diodes may use processingtemperatures in excess of 400° C. In FIG. 2, n-type material 206 andp-type material 208 are positioned at an elevational level below othercomponents, such as the metal-containing interconnects and memoryelement 210 that might be damaged by such processing temperatures. Withthe access diode at a low elevational level, silicon-based diodeprocessing temperatures may be applied without risk to later-formedcomponents at higher elevational levels.

Observation indicates that diode-based, cross-point memory cells mightbe suitable for a three-dimensional architecture except for thesusceptibility of integrated circuits, such as those shown in FIG. 2, toprocess conditions, such as processing temperatures, that may be used informing subsequent memory levels. However, if the levels are stacked andbonded together as in the embodiments herein, a stacked,three-dimensional architecture may be used to reduce damage tounderlying components. That is, components formed using processconditions potentially damaging to underlying components may be formedfirst followed by bonding over memory level 200, or other integratedcircuits. It follows that bonding methods may be used that also reduceexposure to potentially damaging process conditions. Appropriateconductive interconnections may be made between the underlyingintegrated circuit and a subsequent memory level(s) bonded thereover, ifdesired.

In one embodiment, a method includes providing an integrated circuithaving a metal-containing conductive interconnect and forming anelectrical insulator material over the integrated circuit. The methodalso includes providing a substrate containing a semiconductor materialexhibiting a first conductivity type and placing a dopant in only aportion of the semiconductor material. The dopant may be activated toprovide a doped region containing the activated dopant. The doped regionexhibits a second conductivity type opposite the first conductivity typeand the doped region provides a junction with a portion of thesemiconductor material still exhibiting the first conductivity type.After activating the dopant, the method includes bonding the substrateto the insulator material and removing at least some of the substratewhere bonded to the insulator material to expose at least some of theunderlying insulator material. After the removing, a memory cell isformed having a word line, an access diode, a state-changeable memoryelement containing chalcogenide phase change material, and a bit lineall electrically connected in series. The access diode contains thejunction as a p-n junction. The bit line and the word line overlap at across-point and the access diode and the memory element extend betweenthe word line and the bit line at the cross-point.

By way of example, the metal-containing conductive interconnect mayexhibit properties such that, if exposed to at least one operatingcondition used in the activating, a physical structure of theinterconnect would be altered. The activating of the dopant in thesubstrate may occur apart from the integrated circuit. Thereby, exposureof the metal-containing conductive interconnect to operating conditionsused in activating the dopant may be diminished. The activating of thedopant may include heating to a temperature greater than 400° C.

The integrated circuit might include other components, such aschalcogenide phase change material, susceptible to at least oneoperating condition used in the activating of the dopant. That is,providing the integrated circuit may include forming another memory cellhaving another word line, another access diode, another state-changeablememory element containing the chalcogenide phase change material, andanother bit line all electrically connected in series. The other bitline and the other word line may overlap at another cross-point and theother access diode and other memory element may extend between the otherword line and the other bit line at the other cross-point. A method soapplied may thus provide two memory levels of diode-based, cross-pointmemory cells in a three-dimensional, stacked architecture.

The semiconductor material may contain a monocrystalline material andthe p-n junction may lie within the monocrystalline material. The firstconductivity type may be p-type and the second conductivity type mayben-type. Providing the substrate might include providing amonocrystalline silicon substrate exhibiting p-type conductivity as thesemiconductor material.

A variety of known bonding methods may be relied on, for example, thosein which the bonding may occur at no higher than 400° C. The dopedregion of the substrate may be bonded to the insulator material. Thebonding may include bonding the substrate directly to the insulatormaterial. Alternatively, the bonding may include providing an adhesionmaterial between the substrate and the insulator material.

FIG. 3 shows a substrate containing n-type material 306 and p-typematerial 308 being applied over insulator material 236 of memory level200. The integrated circuit encompassing devices formed in array region230 and peripheral region 238 may occupy, but not extend beyond, alateral extent of the integrated circuit. The bonding may includeforming a bond interface between the substrate and the insulatormaterial, wherein the bond interface is continuous and substantiallyplanar over a lateral extent. Although not shown, an adhesion materialmay be included. FIG. 4 shows a bond interface that is continuous andsubstantially planer over the lateral extent within the partial viewprovided.

FIG. 4 also shows part of p-type material 308 removed. Excess p-typematerial 308 may be removed using any known the method compatible withmethods described herein and structures formed thereby.Chemical-mechanical polishing (CMP), wet etching, dry etching, etc. areamong the possibilities. However, it is conceivable to prepare thesubstrate containing n-type material 306 and p-type material 308 inadvance so that excess material may be more easily removed afterbonding.

FIGS. 7-8 show abbreviated details of a known method identified as theSMART-CUT process used by SOITEC of Benin, France and is one example ofa method that involves implanting ions into a wafer and bonding asilicon layer to a substrate by thermal treatment. The SMART-CUT processis described in A. J. Auberton-Herve, “SOI: Materials to Systems,”Digest of the International Electron Device Meeting, San Francisco, pg.3-10, December 1996. Even though the SMART-CUT process is known forbonding an oxidized silicon adhesion layer to a silicon wafer, suchmethod may be modified to be of use in accomplishing the embodimentsdescribed herein.

For example, FIG. 7 shows a substrate including a n-type material 706and p-type material 708. In FIG. 8, hydrogen ions 704 are implanted inp-type material 708 to form a defect material 702. Hydrogen ions may beimplanted to a concentration of from 1×10¹⁶ to 5×10¹⁶ per squarecentimeter. Following activation of n-type and p-type dopants, n-typematerial 706 may be bonded to insulator material 236 directly or to anadhesion material over insulator material 236 in accordance with knownprocessing. Thereafter, excess p-type material 708 may be broken away atdefect material 702 to provide the structure shown in FIG. 4. After CMPto remove remainders of defect material 702 and possibly reducethickness of remaining p-type material 708, formation of memory cellsmay proceed.

FIGS. 9-10 show abbreviated details of a known method identified as theELTRAN (Epitaxial Layer TRANsfer) process used by Canon Inc. ofKanagawa, Japan. The ELTRAN process is described in Yonehara et al.,“ELTRAN; Novel SOI Wafer Technology,” JSAP Int'l, No. 4, pg. 10-16, July2001. In FIG. 9, a portion of a substrate 804 is processed to provide aporous material 802. In the case of a silicon substrate, formation ofporous material 802 may be accomplished by electrochemical reaction inHF. Even though material 802 is porous, additional semiconductormaterial, such as silicon, may be epitaxially grown to provide anadditional thickness over porous material 802.

Either by their intrinsic properties or by placing dopants, n-typematerial 806 and p-type material 808 may be provided over porousmaterial 802 as shown in FIG. 10. Following any activation of dopants,n-type material 806 may be bonded to insulator material 236 directly orto an adhesion material over insulator material 236 in accordance withknown processing. Thereafter, substrate 804 along with some of porousmaterial 802 may be broken away at porous material 802 to provide astructure like that shown in FIG. 4. Often a water jet may be used toassist in the removal. After CMP to remove remainders of porous material802 and possibly reduce thickness of p-type material 808, formation ofmemory cells may proceed.

Bonding of n-type material 706 in a substrate as shown in FIG. 7, n-typematerial 806 in a substrate as shown in FIG. 10, or other substrates mayalso be accomplished by plasma enhanced bonding such as described inSuni et al., “Effects of Plasma Activation on Hydrophilic Bonding of Siand SiO₂,” J. Electrochem Soc., Vol. 149, No. 6, pg. G348-51, June 2002.That is, low-pressure argon or oxygen plasma may be used to activate asurface of n-type material 706 to be bonded. Such activation promoteshydrophilic bonding, such as Si to SiO₂ bonding, at temperatures below200° C.

In a related known method, surfaces to be bonded may be sputter-cleanedby means of energetic particle bombardment and brought into contactunder slight applied pressure in a vacuum environment.

Also, it is possible to use an argon beam to activate a surface tofacilitate bonding between platinum and silicon at room temperature asdescribed in Takagi et al., “Room-Temperature Bonding of Si Wafers to PtFilms on SiO₂ or LiNbO₃ Substrates Using Ar-Beam Surface Activation,”Jpn. J. Appl. Phys., Vol. 38, Part 2, No. 12B, pg. 1559-61, December1999. Platinum might be deposited on insulator material 236 as anadhesion material.

Another low temperature bonding method includes surface activatedbonding (SAB) involving deposition of metal films on both a siliconsubstrate and a SiO₂ substrate as described in T. Suga, “RoomTemperature Bonding/SAB and Its Applications in Microelectronics,”Public Lecture Series: The Impact of Wafer-Level Technologies onAdvanced IC Design, Stanford University, pg. 1-18, May 24, 2001.Possible pairs of metals for use in the two films includes Cu—Cu, Al—Ti,Ni—Cu, and Al—Cu. Elevated temperature exposure up to about 450° C. mayfacilitate bonding, though, the upper end of the range is noted asexceeding 400° C. at which temperature structure alteration might beginto occur in exposed metal-containing interconnects and/or phase changematerial.

An organic “nanoglue” may also be used for bonding as discussed in“Nanoglue for Electronics,” Technology Review, Massachusetts Instituteof Technology, May 23, 2007. Essentially, a chain of carbon and hydrogenatoms with sulfur at one end and silicon at the other end mayrespectively hold copper and SiO₂ together. The molecules orientthemselves next to each other and adhesive strength increases attemperatures up to 700° C. An expectation exists that nanoglue might betailored to adhere different materials by attaching appropriate chemicalgroups at the two ends of the molecular chain. Dissimilar materials,such as insulators and semiconductors, or metals and semiconductors, maybe bonded.

In the bonding shown in FIGS. 3-4, insulator material 236 may be silicondioxide. Consequently, copper may be formed on the substrate includingn-type material 306 and the nanoglue used as described in the “Nanoglue”reference to bond copper to silicon dioxide. The copper may be blanketdeposited across all of n-type material 306 and/or formed in a mannerthat provides patterned copper.

U.S. Pat. No. 6,563,133 issued to Tong pertains to a method ofepitaxial-like wafer bonding at low temperature. The method involvesbonding oxide-free silicon substrate pairs and other substrates at lowtemperature by modifying the surfaces to create defect regions. Forexample, plasma treatment of the surfaces to be bonded withboron-containing plasmas or surface defect regions created by ionimplantation, preferably using boron, may prepare the surfaces. Thesurfaces may also be amorphized. Placing the treated surfaces togetherforms an attached pair at room temperature in ambient air. Such a methodmay be useful in embodiments described herein.

Following bonding, p-type material 308 shown in FIG. 4 may be processedto provide a suitable thickness. Patterning through p-type material 308and n-type material 306 using known methods may provide word line 502,n-type material 506, and p-type material 508 shown in FIG. 5. An exampleof one known method includes standard photolithography and dry etching.As will be appreciated from FIG. 5, the removal of at least some ofn-type material 306 and p-type material 308 where bonded to insulatormaterial 236 may expose at least some of the underlying insulatormaterial 236, or other underlying material, if present.

A variety of options exist for processing adhesion material, ifprovided, between n-type material 306 and insulator material 236. If theadhesion material is insulative, then it may remain or be removed duringremoval of some of n-type material 306 and p-type material 308 to formword line 502. When the adhesion material is insulative, it providesadditional insulator material between n-type material 306 and insulatormaterial 236. If the adhesion material remains, then the insulatormaterial exposed upon removal of some of n-type material 306 will be theinsulator material of the adhesion material. Otherwise, if the adhesionmaterial is removed, then the insulator material exposed duringprocessing will be insulator material 236. If the adhesion material isconductive, then it may be removed to reduce shorting between wordlines, such as word lines 502.

In either circumstance of insulative or conductive adhesion material,the adhesion material may be patterned prior to bonding the substrate toinsulator material 236. As one possibility, removing at least some ofn-type material 306 and exposing underlying insulator material 236 mightnot involve removing adhesion material. Such is especially the case ifthe earlier patterning of the adhesion material matches the laterpatterning of word lines 502.

In the event that conductive adhesion material remains between wordlines 502 and insulator material 236, such conductive material mayprovide conductive strapping of word lines 502 in accordance with knownstrapping techniques. Strapping may enhance conductivity of word lines502. In this manner, the method may include forming conductive linesover insulator material 236 between the substrate and insulator material236. Notably, adhesion material used in the bonding methods herein maybe formed on the substrate containing n-type material 306, on insulatormaterial 236, or both. Hence, patterning of adhesion material, such asto form conductive lines, may occur on the substrate containing n-typematerial 306, on insulator material 236, or both.

As will be appreciated from FIG. 5, forming the memory cell containingword line 502 includes forming the access diode above the word line,forming the memory elements above the access diode, and forming the bitline above the memory element. Word line 502, n-type material 506, andp-type material 508 are all formed in n-type material 306 and p-typematerial 308 from FIG. 4. N-type material 506 and p-type material 508provide a p-n junction for the access diode. The various conductivitytypes and/or dopant concentrations described above for the access diodein memory level 200 are also applicable to the additional access diodeformed thereover in FIG. 5. As described, dopants may be activatedbefore bonding the substrate containing n-type material 306 to insulatormaterial 236. Consequently, the bonded substrate may provide n+/n+/p+,n+/n−/p+, n+/n+/p, or n+/n−/p doped semiconductor material to become therespective word line 502/n-type material 506/p-type material 508.

In accordance with known methods and structures, a contact 512 isprovided on and in contact with p-type material 508. A via including aconductive liner 516 and an insulator material fill 518 may be providedelectrically connecting contact 512 to memory element 510.Alternatively, the via may be formed wholly of conductive materialwithout any insulator material fill. A cap 520 over memory element 510and a via 522 electrically connect memory element 510 to bit line 504.An insulator material 536 may be provided over and around the describecomponents. In FIG. 5, memory element 510 and cap 520 are represented asa continuous line parallel to bit line 504. Alternatively, memoryelement 510 and cap 520 may be isolated to individual memory cells.Composition of the components shown in FIG. 5 may be selected from amongthe same materials as described for like components of memory level 200.

Metallization 526 and vias 528 may be provided electricallyinterconnecting the added array of memory cells to underlying devices inperipheral region 238 of memory level 200. As a result, the memory celladdressing circuits and memory cell read circuits of memory level 200may interoperate with memory cells of the array added over memory level200. Alternatively, additional memory cell addressing circuits andmemory cell read circuits may be provided over memory level 200 toseparately interoperate with the additional memory cells.

The added array of memory cells consequently implements the concept ofdiode-accessed, cross-point memory in a three-dimensional stackedarchitecture. FIG. 6 shows a conceptual, perspective view of the stackedarchitecture. The simplified view of FIG. 6 merely adds a memory array600 that includes word lines 602 having a direction orthogonal to adirection of bit line 604 and overlapping at cross-points. Atcross-points, an access diode containing a n-type material 606 and ap-type material 608 is combined with a memory element 610 in anelectrically-connected series extending between word line 602 and bitline 604 at the cross-point. Although two memory levels are shown inFIG. 6, it will be appreciated that additional memory levels could beadded and interoperate, or not interoperate, as described herein for thefirst two levels.

In one embodiment, a method includes forming an integrated circuitincluding forming a first memory cell having a first word line, a firstaccess diode, a first state-changeable memory element containingchalcogenide phase change material, and a first bit line allelectrically connected in series. The bit line and the word line overlapat a cross-point, the access diode and memory element extend between theword line and the bit line at the first cross-point, and the firstmemory cell also has a metal-containing conductive interconnect. Anelectrical insulator material is formed over the integrated circuit.

The method includes providing a substrate containing a semiconductormaterial exhibiting a first conductivity type, placing a dopant in onlya portion of the semiconductor material, and activating the dopant apartfrom the integrated circuit to provide a doped region containing theactivated dopant. The doped region exhibits a second conductivity typeopposite the first conductivity type. The doped region provides ajunction with a portion of the semiconductor material still exhibitingthe first conductivity type. After activating the dopant, the methodincludes bonding the substrate to the insulator material. Theinterconnect and the first memory element exhibit properties such that,if exposed to at least one operating condition used in the activating,physical structures of the interconnect and the first memory elementwould be altered. At least some of the substrate is removed where bondedto the insulator material to expose at least some of the underlyinginsulator material.

After the removing, the method includes forming a second memory cellhaving a second word line, a second access diode, a secondstate-changeable memory element containing chalcogenide phase changematerial, and a second bit line all electrically connected in series.The second access diode contains the junction as a p-n junction, thesecond bit line and the second word line overlap at a secondcross-point, and the second access diode and second memory elementextending between the second word line and the second bit line at thesecond cross-point.

By way of example, the semiconductor material may be a monocrystallinematerial, the first conductivity type may be p-type, the secondconductivity type may be n-type, and the p-n junction may lay within themonocrystalline material. Also, the bonding may include bonding thedoped region of the substrate to the insulator material at no higherthan 400° C. The integrated circuit may occupy, but not extend beyond, alateral extent of the integrated circuit and the bonding may includeforming a bond interface between the substrate and the insulatormaterial, the bond interface being continuous and substantially planarover the lateral extent.

In one embodiment, a method includes providing an integrated circuithaving a metal-containing conductive interconnect and forming anelectrical insulator material over the integrated circuit. The methodincludes providing a substrate containing a semiconductor materialexhibiting p-type conductivity, placing a dopant in only a portion ofthe semiconductor material, and activating the dopant apart from theintegrated circuit by heating to greater than 400° C. to provide a dopedregion containing the activated dopant. The doped region exhibits n-typeconductivity and the doped region provides a p-n junction with a portionof the semiconductor material still exhibiting p-type conductivity.After activating the dopant, the n-type doped region of the substrate isbonded to the insulator material at no higher than 400° C. At least someof the substrate is removed where bonded to the insulator material toexpose at least some of the underlying insulator material

After the removing, the method includes forming a memory cell having aword line, an access diode, a state-changeable memory element containingchalcogenide phase change material, and a bit line all electricallyconnected in series. The access diode contains the p-n junction, the bitline and the word line overlap at a cross-point, and the access diodeand memory element extend between the word line and the bit line at thecross-point.

In addition to methods, embodiments also address memory devices. In oneembodiment, a memory device includes an integrated circuit having ametal-containing conductive interconnect and an electrical insulatormaterial over the integrated circuit. The memory device includes amemory cell having a word line, an access diode above the word line, astate-changeable memory element above the access diode and containingchalcogenide phase change material, and a bit line above the memoryelement all electrically connected in series. The access diode containsa p-n junction in a semiconductor material, the bit line and the wordline overlapping at a cross-point and the access diode and memoryelement extending between the word line and the bit line at thecross-point. An adhesion material is over the insulator material andbonds the word line to the insulator material.

By way of example, the integrated circuit may include a structureselected from the group consisting of a memory array, a peripheralcircuit, a central processing unit, an application-specific integratedcircuit, a field-programmable gate array, and combinations thereof. Theintegrated circuit may include a peripheral circuit configured tooperate the memory cell formed thereover. The adhesion material mayinclude one or more metal films, an organic nanoglue, or combinationsthereof.

In compliance with the statute, the subject matter disclosed herein hasbeen described in language more or less specific as to structural andmethodical features. It is to be understood, however, that the claimsare not limited to the specific features shown and described, since themeans herein disclosed comprise example embodiments. The claims are thusto be afforded full scope as literally worded, and to be appropriatelyinterpreted in accordance with the doctrine of equivalents.

1. A method comprising: providing an integrated circuit having ametal-containing conductive interconnect; forming an electricalinsulator material over the integrated circuit; providing a substratecontaining a semiconductor material exhibiting a first conductivitytype; placing a dopant in only a portion of the semiconductor material;activating the dopant to provide a doped region containing the activateddopant, the doped region exhibiting a second conductivity type oppositethe first conductivity type and the doped region providing a junctionwith a portion of the semiconductor material still exhibiting the firstconductivity type; after activating the dopant, bonding the substrate tothe insulator material; removing at least some of the substrate wherebonded to the insulator material to expose at least some of theunderlying insulator material; and after the removing, forming a memorycell having a word line, an access diode, a state-changeable memoryelement containing chalcogenide phase change material, and a bit lineall electrically connected in series, the access diode containing thejunction as a p-n junction, the bit line and the word line overlappingat a cross-point, and the access diode and memory element extendingbetween the word line and the bit line at the cross-point.
 2. The methodof claim 1 wherein the providing of the integrated circuit comprisesforming another memory cell having another word line, another accessdiode, another state-changeable memory element containing chalcogenidephase change material, and another bit line all electrically connectedin series, the other bit line and the other word line overlapping atanother cross-point and the other access diode and other memory elementextending between the other word line and the other bit line at theother cross-point.
 3. The method of claim 1 wherein the insulatormaterial is selected from the group consisting of silicon oxide, siliconnitride, silicon oxynitride, and combinations thereof.
 4. The method ofclaim 1 wherein the interconnect exhibits properties such that, ifexposed to at least one operating condition used in the activating, aphysical structure of the interconnect would be altered.
 5. The methodof claim 1 wherein the activating of the dopant in the substrate occursapart from the integrated circuit.
 6. The method of claim 1 wherein theactivating comprises heating to greater than 400° C.
 7. The method ofclaim 1 wherein the semiconductor material comprises a monocrystallinematerial and the p-n junction lies within the monocrystalline material.8. The method of claim 1 wherein the first conductivity type is p-typeand the second conductivity type is n-type.
 9. The method of claim 1wherein providing the substrate comprises providing a monocrystallinesilicon substrate exhibiting p-type conductivity as the semiconductormaterial.
 10. The method of claim 1 wherein the bonding comprisesbonding the doped region of the substrate to the insulator material. 11.The method of claim 1 wherein the bonding comprises bonding thesubstrate directly to the insulator material.
 12. The method of claim 1wherein the bonding comprises providing an adhesion material between thesubstrate and the insulator material.
 13. The method of claim 1 whereinthe bonding occurs at no higher than 400° C.
 14. The method of claim 1wherein the integrated circuit occupies, but does not extend beyond, alateral extent of the integrated circuit and the bonding comprisesforming a bond interface between the substrate and the insulatormaterial, the bond interface being continuous and substantially planarover the lateral extent.
 15. The method of claim 1 wherein forming thememory cell comprises forming the access diode above the word line,forming the memory element above the access diode, and forming the bitline above the memory element.
 16. The method of claim 1 furthercomprising forming conductive lines over the insulator material betweenthe substrate and the insulator material.
 17. A method comprising:forming an integrated circuit including forming a first memory cellhaving a first word line, a first access diode, a first state-changeablememory element containing chalcogenide phase change material, and afirst bit line all electrically connected in series, the bit line andthe word line overlapping at a cross-point, the access diode and memoryelement extending between the word line and the bit line at the firstcross-point, and the first memory cell also having a metal-containingconductive interconnect; forming an electrical insulator material overthe integrated circuit; providing a substrate containing a semiconductormaterial exhibiting a first conductivity type; placing a dopant in onlya portion of the semiconductor material; activating the dopant apartfrom the integrated circuit to provide a doped region containing theactivated dopant, the doped region exhibiting a second conductivity typeopposite the first conductivity type and the doped region providing ajunction with a portion of the semiconductor material still exhibitingthe first conductivity type; after activating the dopant, bonding thesubstrate to the insulator material, the interconnect and the firstmemory element exhibiting properties such that, if exposed to at leastone operating condition used in the activating, physical structures ofthe interconnect and the first memory element would be altered; removingat least some of the substrate where bonded to the insulator material toexpose at least some of the underlying insulator material; and after theremoving, forming a second memory cell having a second word line, asecond access diode, a second state-changeable memory element containingchalcogenide phase change material, and a second bit line allelectrically connected in series, the second access diode containing thejunction as a p-n junction, the second bit line and the second word lineoverlapping at a second cross-point, and the second access diode andsecond memory element extending between the second word line and thesecond bit line at the second cross-point.
 18. The method of claim 17wherein the semiconductor material comprises a monocrystalline material,the first conductivity type is p-type, the second conductivity type isn-type, and the p-n junction lies within the monocrystalline material.19. The method of claim 17 wherein the bonding comprises bonding thedoped region of the substrate to the insulator material at no higherthan 400° C.
 20. The method of claim 17 wherein the integrated circuitoccupies, but does not extend beyond, a lateral extent of the integratedcircuit and the bonding comprises forming a bond interface between thesubstrate and the insulator material, the bond interface beingcontinuous and substantially planar over the lateral extent.
 21. Themethod of claim 17 wherein forming the second memory cell comprisesforming the second access diode above the second word line, forming thesecond memory element above the second access diode, and forming thesecond bit line above the second memory element.
 22. A methodcomprising: providing an integrated circuit having a metal-containingconductive interconnect; forming an electrical insulator material overthe integrated circuit; providing a substrate containing a semiconductormaterial exhibiting p-type conductivity; placing a dopant in only aportion of the semiconductor material; activating the dopant apart fromthe integrated circuit by heating to greater than 400° C. to provide adoped region containing the activated dopant, the doped regionexhibiting n-type conductivity and the doped region providing a p-njunction with a portion of the semiconductor material still exhibitingp-type conductivity; after activating the dopant, bonding the n-typedoped region of the substrate to the insulator material at no higherthan 400° C.; removing at least some of the substrate where bonded tothe insulator material to expose at least some of the underlyinginsulator material; and after the removing, forming a memory cell havinga word line, an access diode, a state-changeable memory elementcontaining chalcogenide phase change material, and a bit line allelectrically connected in series, the access diode containing the p-njunction, the bit line and the word line overlapping at a cross-point,and the access diode and memory element extending between the word lineand the bit line at the cross-point.
 23. The method of claim 22 whereinthe semiconductor material comprises a monocrystalline material and thep-n junction lies within the monocrystalline material.
 24. The method ofclaim 22 wherein the integrated circuit occupies, but does not extendbeyond, a lateral extent of the integrated circuit and the bondingcomprises forming a bond interface between the substrate and theinsulator material, the bond interface being continuous andsubstantially planar over the lateral extent.
 25. The method of claim 22wherein forming the memory cell comprises forming the access diode abovethe word line, forming the memory element above the access diode, andforming the bit line above the memory element.